Gold nanowire electrodes for flexible organic thin-film transistors

被引:1
|
作者
Takane, Satoshi [1 ,2 ,3 ]
Noda, Yuki [1 ]
Toyoshima, Naomi [1 ]
Uemura, Takafumi [1 ,3 ]
Bando, Yuki [1 ,2 ,3 ]
Sekitani, Tsuyoshi [1 ,2 ,3 ]
机构
[1] Osaka Univ, SANKEN Inst Sci & Ind Res, Ibaraki, Osaka 5670047, Japan
[2] Osaka Univ, Grad Sch Engn, Dept Appl Phys, Suita, Osaka 5650871, Japan
[3] Natl Inst Adv Ind Sci & Technol, Adv Photon & Biosensing Open Innovat Lab, Suita, Osaka 5650871, Japan
关键词
gold nanowire; organic thin-film transistor; flexible electronics; LARGE-AREA; AMPLIFIER; TOXICITY; SENSOR;
D O I
10.35848/1882-0786/ac896a
中图分类号
O59 [应用物理学];
学科分类号
摘要
A flexible organic thin-film transistor (OTFT) with gold nanowire (AuNW) networks as source/drain/gate electrodes (AuNW-OTFT) was fabricated and characterized. Its fabrication was enabled by the successful formation of AuNW network electrodes on a flexible thin-film substrate using the thermal pressing transfer method. The fabricated AuNW-OTFT exhibited typical p-type characteristics (mobility: 6.0 x 10(-2) cm(2) V(-1 )s(-1), on/off ratio: 10(5)) and a lower contact resistance than that of an OTFT with vacuum-deposited Au electrodes in the same configuration. Furthermore, the AuNW-OTFT demonstrated high mechanical durability, as proven by the absence of significant characteristic changes before and after bending (bending radius:0.8 mm).
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页数:5
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