Photon antibunching from a single lithographically defined InGaAs/GaAs quantum dot

被引：15
|
作者：
Verma, V. B. [1 ]
Stevens, Martin J. [1 ]
Silverman, K. L. [1 ]
Dias, N. L. [2 ]
Garg, A. [2 ]
Coleman, J. J. [2 ]
Mirin, R. P. [1 ]
机构：
[1] Natl Inst Stand & Technol, Div Optoelect, Boulder, CO 80305 USA
[2] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA
来源：
OPTICS EXPRESS | 2011年 / 19卷 / 05期
基金：
美国国家科学基金会;
关键词：
CRYPTOGRAPHY; TEMPERATURE; TURNSTILE;
D O I：
10.1364/OE.19.004182
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We demonstrate photon antibunching from a single lithographically defined quantum dot fabricated by electron beam lithography, wet chemical etching, and overgrowth of the barrier layers by metalorganic chemical vapor deposition. Measurement of the second-order autocorrelation function indicates g((2))(0) = 0.395 +/- 0.030, below the 0.5 limit necessary for classification as a single photon source. (C) 2011 Optical Society of America
引用
收藏
页码：4182 / 4187
页数：6
相关论文
共 50 条
  • [1] Photon antibunching at high temperature from a single InGaAs/GaAs quantum dot
    Mirin, RP
    APPLIED PHYSICS LETTERS, 2004, 84 (08) : 1260 - 1262
  • [2] Photon antibunching observed from an InAlAs single quantum dot
    Kimura, S
    Kumano, H
    Endo, M
    Suemune, I
    Yokoi, T
    Sasakura, H
    Adachi, S
    Muto, S
    Song, HZ
    Hirose, S
    Usuki, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (24-27): : L793 - L796
  • [3] Photon antibunching observed from an InAlAs single quantum dot
    Kimura, Satoshi
    Kumano, Hidekazu
    Endo, Michiaki
    Suemune, Ikuo
    Yokoi, Tomonori
    Sasakura, Hirotaka
    Adachi, Satoru
    Muto, Shunichi
    Song, Hai Zhi
    Hirose, Shinichi
    Usuki, Tatsuya
    Japanese Journal of Applied Physics, Part 2: Letters, 2005, 44 (24-27):
  • [4] Photon antibunching from a single semiconductor quantum dot at room temperature
    Michler, P
    Imamolgu, A
    Mason, MD
    Carson, PJ
    Strouse, GF
    Buratto, SK
    PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, 2001, 87 : 1173 - 1174
  • [5] Photon antibunching in single CdSe/ZnS quantum dot fluorescence
    Lounis, B
    Bechtel, HA
    Gerion, D
    Alivisatos, P
    Moerner, WE
    CHEMICAL PHYSICS LETTERS, 2000, 329 (5-6) : 399 - 404
  • [6] Ramsey fringes in a single InGaAs/GaAs quantum dot
    Ester, P.
    Stuffer, S.
    de Vasconcellos, S. Michaelis
    Bichler, M.
    Zrenner, A.
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2006, 243 (10): : 2229 - 2232
  • [7] Single entangled photon pair emission from an InGaAs/GaAs quantum dot up to temperatures of 30 K
    Hafenbrak, R.
    Ulrich, S. M.
    Wang, L.
    Rastelli, A.
    Schmidt, O. G.
    Michler, P.
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 2, 2009, 6 (02): : 389 - +
  • [8] Photon antibunching from a single quantum-dot-microcavity system in the strong coupling regime
    Press, David
    Goetzinger, Stephan
    Reitzenstein, Stephan
    Hofmann, Carolin
    Loeffler, Andreas
    Kamp, Martin
    Forchel, Alfred
    Yamamoto, Yoshihisa
    PHYSICAL REVIEW LETTERS, 2007, 98 (11)
  • [9] Linearly polarized single photon antibunching from a site-controlled InGaN quantum dot
    Jemsson, Tomas
    Machhadani, Houssaine
    Karlsson, K. Fredrik
    Hsu, Chih-Wei
    Holtz, Per-Olof
    APPLIED PHYSICS LETTERS, 2014, 105 (08)
  • [10] Single photon emission from an InGaAs quantum dot precisely positioned on a nanoplane
    Hsieh, Tung-Po
    Chyi, Jen-Inn
    Chang, Hsiang-Szu
    Chen, Wen-Yen
    Hsu, Tzu Min
    Chang, Wen-Hao
    APPLIED PHYSICS LETTERS, 2007, 90 (07)
12345