Gate modulation in carbon nanotube field effect transistors-based NH3 gas sensors

被引：41

作者：

Peng, Ning ^{[1
]}

Zhang, Qing ^{[1
]}

Lee, Yi Chau ^{[1
]}

Tan, Ooi Kiang ^{[1
]}

Marzari, Nicola ^{[2
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Ctr Microelect, Singapore 639798, Singapore

[2] 13 5066 MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 2008年 / 132卷 / 01期

关键词：

ammonia; carbon nanotube; field effect transistor; gas sensor; Schottky barrier;

D O I：

10.1016/j.snb.2008.01.025

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

Single-walled carbon nanotube field effect transistors (CNTFETs) are used as NH3 gas sensors and their sensing performances are studied in terms of gate biasing effect. By applying a positive gate bias, a high sensitivity of 178.5% per ppm, is achieved. The reversibility of the CNTFET sensors is also found to be significantly improved under the appropriate positive gate voltages. In this study, an in-depth understanding of how the electrical properties of the CNTFETs are affected by NH3 gas is gained. (C) 2008 Elsevier B.V. All rights reserved.

引用

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页码：191 / 195

页数：5

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