Analysis of various electron blocking layers to improve efficiency in green light-emitting diodes

被引：10
|
作者：
Usman, Muhammad [1 ]
Anwar, Abdur-Rehman [1 ]
Saba, Kiran [2 ]
Munsif, Munaza [1 ]
机构：
[1] Ghulam Ishaq Khan Inst Engn Sci & Technol, Fac Engn Sci, Topi 23460, Khyber Pakhtunk, Pakistan
[2] Polish Acad Sci, Inst High Pressure Phys, Sokolowska 29-37, PL-01142 Warsaw, Poland
来源：
CERAMICS INTERNATIONAL | 2020年 / 46卷 / 11期
关键词：
III-Nitrides; Light-emitting diodes; Green; HOLE-INJECTION EFFICIENCY; QUANTUM EFFICIENCY; POLARIZATION; FIELDS;
D O I：
10.1016/j.ceramint.2020.04.151
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Efficiency of GaN-based green light-emitting diodes with various electron blocking layers has been studied numerically. By employing conventional AlGaN, graded AlGaN, quaternary AlGaInN and ternary AlInN electron blocking layers, performance of each device has been evaluated. The device characteristics presented include carrier transport, radiative recombination rate, electrostatic field, emission spectra and efficiency.
引用
收藏
页码：18464 / 18468
页数：5
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