Plasticity of indium nanostructures as revealed by synchrotron X-ray microdiffraction

被引:25
|
作者
Budiman, Arief Suriadi [2 ]
Lee, Gyuhyon [1 ]
Burek, Michael J. [1 ]
Jang, Dongchan [3 ]
Han, Seung Min J. [4 ]
Tamura, Nobumichi [5 ]
Kunz, Martin [5 ]
Greer, Julia R. [3 ]
Tsui, Ting Y. [1 ]
机构
[1] Univ Waterloo, Waterloo Inst Nanotechnol, Waterloo, ON N2L 3G1, Canada
[2] Los Alamos Natl Lab, Ctr Integrated Nanotechnol, Los Alamos, NM 87545 USA
[3] CALTECH, Div Engn & Appl Sci, Pasadena, CA 91125 USA
[4] Korea Adv Inst Sci & Technol, Grad Sch Energy Environm Water Sustainabil, Taejon 305701, South Korea
[5] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Adv Light Source, Berkeley, CA 94720 USA
基金
加拿大创新基金会; 加拿大自然科学与工程研究理事会; 新加坡国家研究基金会;
关键词
Indium; Nanopillar; X-ray microdiffraction; Microstructure; Dislocation; MECHANICAL-PROPERTIES; UNIAXIAL COMPRESSION; DEFORMATION; MICROSTRUCTURE; DIFFRACTION; FABRICATION; SCALE; BEAM;
D O I
10.1016/j.msea.2012.01.017
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Indium columnar structures with diameters near 1 mu m were deformed by uniaxial compression at strain rates of approximately 0.01 and 0.001 s(-1). Defect density evolution in the nanopillars was evaluated by applying synchrotron Laue X-ray microdiffraction (mu SLXRD) on the same specimens before and after deformation. Results of the mu SLXRD measurements indicate that the dislocation density increases as a result of mechanical deformation and is a strong function of strain rate. These results suggest that the rate of defect generation during the compression tests exceeds the rate of defect annihilation, implying that plasticity in these indium nanostructures commences via dislocation multiplication rather than nucleation processes. This is in contrast with the behaviors of other materials at the nanoscale, such as, gold, tin, molybdenum, and bismuth. A hypothesis based on the dislocation mean-free-path prior to the multiplication process is proposed to explain this variance. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码:89 / 97
页数:9
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