A Comparative Study of Integer Quantum Hall Effect in Monolayer and Bilayer Graphene

被引:0
|
作者
Sahoo, S. [1 ]
Dutta, A. K. [1 ]
机构
[1] Natl Inst Technol, Dept Phys, Durgapur 713209, W Bengal, India
关键词
D O I
10.1063/1.3644449
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Graphene is the recently discovered two-dimensional (2D) nanomaterial. Electrons in graphene, obeying a linear dispersion relation, behave like massless relativistic particles. It has many peculiar properties. It is the thinnest material in the universe and the strongest ever measured. Its charge carriers exhibit intrinsic mobility and can travel micrometer-long distances without scattering at room temperature. Its unconventional Landau level spectrum of massless Dirac fermions leads to a new type of integer quantum Hall effect (IQHE). In monolayer graphene the first plateau occurs at 2e(2) / h and the generalised formula for the quantized Hall conductivity is sigma(xy) = 4e(2) / h (n + 1/2), where n is an integer. But in bilayer graphene the first plateau occurs at 4e(2) / h and the generalised formula for the quantized Hall conductivity is sigma(xy) =4ne(2) / h. In this paper, we comparatively study the IQHE in monolayer and bilayer graphene.
引用
收藏
页数:4
相关论文
共 50 条
  • [1] Quantum Hall effect in monolayer, bilayer and trilayer graphene
    Cobaleda, C.
    Diez, E.
    Amado, M.
    Pezzini, S.
    Rossella, F.
    Bellani, V.
    Lopez-Romero, D.
    Maude, D. K.
    [J]. 20TH INTERNATIONAL CONFERENCE ON THE APPLICATION OF HIGH MAGNETIC FIELDS IN SEMICONDUCTOR PHYSICS (HMF-20), 2013, 456
  • [2] Theory of integer quantum Hall effect in insulating bilayer graphene
    Roy, Bitan
    [J]. PHYSICAL REVIEW B, 2014, 89 (20)
  • [3] Unconventional fractional quantum Hall effect in monolayer and bilayer graphene
    Jacak, Janusz
    Jacak, Lucjan
    [J]. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS, 2016, 17 (01) : 149 - 165
  • [4] Quantum Hall effect in monolayer-bilayer graphene planar junctions
    Tian, Jifa
    Jiang, Yongjin
    Childres, Isaac
    Cao, Helin
    Hu, Jiangping
    Chen, Yong P.
    [J]. PHYSICAL REVIEW B, 2013, 88 (12)
  • [5] Supersymmetry and unconventional quantum Hall effect in monolayer, bilayer and trilayer graphene
    Ezawa, Motohiko
    [J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2007, 40 (02): : 269 - 272
  • [6] QUANTUM HALL EFFECT QUANTIZATION TESTS IN EXFOLIATED BILAYER AND MONOLAYER GRAPHENE
    Guignard, J.
    Schopfer, F.
    Poirier, W.
    Glattli, D. C.
    [J]. 2010 CONFERENCE ON PRECISION ELECTROMAGNETIC MEASUREMENTS CPEM, 2010, : 577 - +
  • [7] Anomalous integer quantum Hall effect in AA-stacked bilayer graphene
    Hsu, Ya-Fen
    Guo, Guang-Yu
    [J]. PHYSICAL REVIEW B, 2010, 82 (16):
  • [8] Integer quantum Hall effect in graphene
    Jellal, Ahmed
    [J]. PHYSICS LETTERS A, 2016, 380 (17) : 1514 - 1516
  • [9] Electron-hole asymmetric integer and fractional quantum Hall effect in bilayer graphene
    Kou, A.
    Feldman, B. E.
    Levin, A. J.
    Halperin, B. I.
    Watanabe, K.
    Taniguchi, T.
    Yacoby, A.
    [J]. SCIENCE, 2014, 345 (6192) : 55 - 57
  • [10] A comparative study of broadband PbS quantum dots/graphene photodetectors with monolayer and bilayer graphene
    Olson, Austin
    Chambers, Dakeya
    Gotfredson, Sarah
    Shultz, Andrew
    Liu, Bo
    Gong, Maogang
    Wu, Judy Z.
    [J]. NANO EXPRESS, 2024, 5 (03):