Room temperature negative differential resistance characteristics of polar III-nitride resonant tunneling diodes

被引：44

作者：

Bayram, C. ^{[1
]}

Vashaei, Z. ^{[1
]}

Razeghi, M. ^{[1
]}

机构：

[1] Northwestern Univ, Dept Elect Engn & Comp Sci, Ctr Quantum Devices, Evanston, IL 60208 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 09期

关键词：

GAN; FIELDS; ALN;

D O I：

10.1063/1.3484280

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

III-nitride resonant tunneling diodes (RTDs), consisting Al(0.2)Ga(0.8)N/GaN double-barrier (DB) active layers, were grown on c-plane lateral epitaxial overgrowth (LEO) GaN/sapphire and c-plane freestanding (FS) GaN. RTDs on both templates, fabricated into mesa diameters ranging from 5 to 35 mu m, showed negative differential resistance (NDR) at room temperature. NDR characteristics (voltage and current density at NDR onset and current-peak-to-valley ratio) were analyzed and reported as a function of device size and substrate choice. Our results show that LEO RTDs perform as well as FS ones and DB active layer design and quality have been the bottlenecks in III-nitride RTDs. (C) 2010 American Institute of Physics. [doi:10.1063/1.3484280]

引用

页数：3

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