Radiation Effect Models in Solar Cells - Comparison of Simulations with Experimental Data

被引：0

作者：

Fedoseyev, Alex ^{[1
]}

Bald, Tim ^{[1
]}

Turowski, Marek ^{[1
]}

Raman, Ashok ^{[1
]}

Cress, Cory ^{[2
]}

Walters, Robert ^{[2
]}

Warner, Jeff ^{[2
]}

Hubbard, Seth ^{[3
]}

机构：

[1] CFDRC, Huntsville, AL 35805 USA

[2] NRL, Washington, DC 20375 USA

[3] Rochester Inst Technol, Rochester, NY 14623 USA

来源：

2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2012年

关键词：

Solar cells; Radiation Effects Models; Simulation; Experimental data; TCAD;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We present the radiation effect models for solar cells used in NanoTCAD device simulator and provide comparison with experimentally measured on solar cell performance. The device modeled is a p+ n GaAs solar cell. Dark, Light IV curves and corresponding performance parameters are simulated and compared with experimental results for 2 MeV protons at varying fluence. Majority carrier defect introduction rates for n-type GaAs used in the NanoTCAD simulations were taken from deep level transient spectroscopy (DLTS) data provided by the Naval Research Lab (NRL). Results show a good match between simulations and experimental results.

引用

页码：2801 / 2806

页数：6

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