Short-term plasticity and long-term potentiation mimicked in single inorganic synapses

被引:2
|
作者
Ohno, Takeo [1 ]
Hasegawa, Tsuyoshi [1 ]
Tsuruoka, Tohru [1 ]
Terabe, Kazuya [1 ]
Gimzewski, James K. [1 ,2 ,3 ]
Aono, Masakazu [1 ]
机构
[1] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton MANA, Tsukuba, Ibaraki 3050044, Japan
[2] Univ Calif Los Angeles, Dept Chem & Biochem, Los Angeles, CA 90095 USA
[3] Univ Calif Los Angeles, CNSI, Los Angeles, CA 90095 USA
关键词
NEURAL-NETWORKS; SILICON NEURON; ATOMIC SWITCH; CIRCUIT; MEMORY; HIPPOCAMPUS; TRANSISTOR; SPIKING; VLSI;
D O I
10.1038/NMAT3054
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Memory is believed to occur in the human brain as a result of two types of synaptic plasticity: short-term plasticity (STP) and long-term potentiation (LTP; refs 1-4). In neuromorphic engineering(5,6), emulation of known neural behaviour has proven to be difficult to implement in software because of the highly complex interconnected nature of thought processes. Here we report the discovery of a Ag2S inorganic synapse, which emulates the synaptic functions of both STP and LTP characteristics through the use of input pulse repetition time. The structure known as an atomic switch(7,8), operating at critical voltages, stores information as STP with a spontaneous decay of conductance level in response to intermittent input stimuli, whereas frequent stimulation results in a transition to LTP. The Ag2S inorganic synapse has interesting characteristics with analogies to an individual biological synapse, and achieves dynamic memorization in a single device without the need of external preprogramming. A psychological model related to the process of memorizing and forgetting is also demonstrated using the inorganic synapses. Our Ag2S element indicates a breakthrough in mimicking synaptic behaviour essential for the further creation of artificial neural systems that emulate characteristics of human memory.
引用
收藏
页码:591 / 595
页数:5
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