High-resolution photoemission spectroscopy of CeSi single crystal

被引：5

作者：

Mimura, K

Takase, T

Mizohata, H

Taguchi, Y

Ichikawa, K

Takeda, Y

Arita, M

Shimada, K

Namatame, H

Noguchi, S

Okuda, K

Taniguchi, M

Aita, O

机构：

[1] Osaka Prefecture Univ, Grad Sch Engn, Sakai, Osaka 5998531, Japan

[2] Hiroshima Univ, Fac Sci, Higashihiroshima 7398526, Japan

[3] Hiroshima Univ, Ctr Synchrotron Radiat, Higashihiroshima 7398526, Japan

来源：

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA | 2001年 / 114卷 / 114-116期

关键词：

CeSi; photoemission spectroscopy; electronic structure; Ce 4f state;

D O I：

10.1016/S0368-2048(00)00241-3

中图分类号：

O433 [光谱学];

学科分类号：

0703 ; 070302 ;

摘要：

We have investigated the valence-band electronic structures for a CeSi single crystal using high-resolution ultraviolet photoemission spectroscopy at 7 and 290 K. The spectra do not show a so-called tail of Kondo resonance even at 7 K. This indicates that the Kondo effect is very weak in CeSi, that is, the Kondo temperature is very low. In comparing the spectrum measured at 7 K with that at 290 K, the spectral intensity at 7 K near the Fermi edge decreases and that in the energy range 20-100 meV increases. The redistribution of the spectral intensity is related to the formation of magnetic ordering in CeSi at low temperature. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：723 / 727

页数：5

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