Microwave dielectric properties of SrLa[Ga1-x(Mg0.5Ti0.5)x]O4 and SrLa[Ga1-x(Zn0.5Ti0.5)x]O4 (x=0.2-0.8) ceramics

被引:9
|
作者
Yan, Han [1 ]
Chen, Gu Yi [1 ]
Li, Lei [1 ]
Liu, Bing [2 ]
Chen, Xiang Ming [1 ]
机构
[1] Zhejiang Univ, Sch Mat Sci & Engn, Lab Dielect Mat, Hangzhou 310027, Peoples R China
[2] Hangzhou Dianzi Univ, Coll Elect Informat & Engn, Hangzhou, Peoples R China
关键词
K2NiF4-type structure; microwave dielectric properties; COMPLEX-PERMITTIVITY; PHASE; SM; MICROSTRUCTURES; EVOLUTION; ND;
D O I
10.1111/ijac.13395
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
SrLa[Ga1-x(R0.5Ti0.5)(x)]O-4 (R = Mg, Zn) ceramics were prepared by a standard solid state sintering method. The single-phase ceramics with K2NiF4-type layered perovskite structure and I4/mmm space group were obtained, indicating that SrLa(R0.5Ti0.5) and SrLaGaO4 can form the unlimited solid solutions. With increasing x for R = Mg and Zn, epsilon(r) increases monotonously, the Qf value first increases and then decreases, while tau(f) increases from a negative to a positive value. The optimized microwave dielectric properties were obtained as following: epsilon(r) = 23.3, Qf = 89 400 GHz, tau(f) = -0.8 ppm/degrees C for SrLa[Ga-0.6(Mg0.5Ti0.5)(0.4)]O-4 and epsilon(r) = 23.3, Qf = 76 200 GHz, tau(f) = 0.2 ppm/degrees C for SrLa[Ga-0.7(Zn0.5Ti0.5)(0.3)]O-4, indicating that the present solid solution ceramics are the promising candidates as microwave resonator materials for the telecommunication applications.
引用
收藏
页码:790 / 796
页数:7
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