High-density growth of horizontally aligned carbon nanotubes for interconnects

被引：19

作者：

Yan, F. ^{[1
]}

Zhang, C. ^{[1
]}

Cott, D. ^{[2
]}

Zhong, G. ^{[1
]}

Robertson, J. ^{[1
]}

机构：

[1] Univ Cambridge, Dept Engn, Cambridge CB3 0FA, England

[2] IMEC, B-3001 Louvain, Belgium

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2010年 / 247卷 / 11-12期

关键词：

carbon nanotube; chemical vapor deposition; horizontal growth; interconnect; electrical; CARRYING-CAPACITY; ELECTRODES; CIRCUITS;

D O I：

10.1002/pssb.201000134

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We demonstrate growth of horizontally aligned carbon nanotubes (CNTs) from a vertical, conductive surface for use as horizontal interconnects in integrated circuits. This is achieved by using a CMOS compatible metal, CoSi2, as the catalyst support and contact, and Fe as the catalyst. The Fe is patterned by tilt evaporation, and cold-wall chemical vapor deposition achieves a nanotube wall density of similar to 6 x 10(11) cm(-2). Electrical measurements show that both outer and some inner walls carry current, demonstrating a promising method for growing nanoscale horizontal interconnects. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：2669 / 2672

页数：4

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