Epitaxial growth of continuous CeO2 (111) ultra-thin films on Cu(111)

被引：84

作者：

Sutara, F. ^{[1
]}

Cabala, M. ^{[1
]}

Sedlacek, L. ^{[1
]}

Skala, T. ^{[2
]}

Skoda, M. ^{[1
]}

Matolin, V. ^{[1
]}

Prince, K. C. ^{[2
]}

Chab, V. ^{[3
]}

机构：

[1] Charles Univ Prague, Fac Math & Phys, Dept Surace & Plasma Sci, CR-18000 Prague 8, Czech Republic

[2] Sincrotrone Trieste, I-34012 Basovizza, Italy

[3] Acad Sci Czech Republic, Inst Phys, Prague 16253 6, Czech Republic

来源：

THIN SOLID FILMS | 2008年 / 516卷 / 18期

关键词：

ceria; copper; single crystal epitaxy; synchrotron radiation photoelectron spectroscopy; resonant photoelectron spectroscopy;

D O I：

10.1016/j.tsf.2007.11.013

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Cerium oxide was grown epitaxially on a Cu(111) substrate at 520 K in an oxygen atmosphere and resulted in a high quality CeO(2) (111) overlayers. The continuous single crystalline thin films were characterized by low energy electron diffraction, X-ray photoelectron spectroscopy of the Ce 3d core levels and resonant photoelectron spectroscopy of the valence band. The Ce oxide on Cu(111) grew initially in the form of islands giving a sharp (1.5 x 1.5) hexagonal diffraction pattern of the CeO(2) (111) structure. It covered the substrate surface completely after deposition of a 2.5-monolayer thick overlayer. Ce 3d spectra and resonant enhancement of the valence band emission show that Ce is present in the Ce(4+) oxidation state. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：6120 / 6124

页数：5

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