52-75 GHz wideband low-noise amplifier in 90 nm CMOS technology

被引：13

作者：

Sananes, R. ^{[1
]}

Socher, E. ^{[1
]}

机构：

[1] Tel Aviv Univ, Sch Elect Engn, IL-69978 Tel Aviv, Israel

来源：

ELECTRONICS LETTERS | 2012年 / 48卷 / 02期

关键词：

GAIN;

D O I：

10.1049/el.2011.2788

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A three-stage single-ended low-noise amplifier covering almost the entire V-band is presented. The design employs three cascade single-ended stages with pi-sections for wideband interstage matching and source degeneration at the first stage. The amplifier achieves a peak gain of 14 dB and minimum noise figure of 4.8 dB. A record 3 dB bandwidth of 37% is achieved with power consumption of 32 mW and core silicon area of 0.065 mm(2) in 90 nm CMOS technology.

引用

页码：71 / 72

页数：2

共 50 条

[1] A 54.4-90 GHz Low-Noise Amplifier in 65-nm CMOS
Yu, Yiming
Liu, Huihua
Wu, Yunqiu
Kang, Kai
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2017, 52 (11) : 2892 - 2904
[2] A Wideband Low Power Low-Noise Amplifier in CMOS Technology
Meaamar, Ali
Boon, Chirn Chye
Yeo, Kiat Seng
Do, Manh Anh
[J]. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2010, 57 (04) : 773 - 782
[3] A Temperature Variation Compensated 60-GHz Low-Noise Amplifier in 90-nm CMOS technology
Shin, Shih-Chieh
Leung, Matthew Chung-Hin
Hsiao, Sen-Wen
[J]. ASIA-PACIFIC MICROWAVE CONFERENCE 2011, 2011, : 211 - 214
[4] A 9.96 mW 3.24±0.5 dB NF 1.9∼22.5 GHz Wideband Low-Noise Amplifier Using 90 nm CMOS Technology
Lin, Yo-Sheng
Wang, Chien-Chin
Lee, Jen-How
[J]. 2014 IEEE RADIO & WIRELESS SYMPOSIUM (RWS), 2014, : 208 - 210
[5] Power Efficient Distributed Low-Noise Amplifier in 90 nm CMOS
Machiels, Brecht
Reynaert, Patrick
Steyaert, Michiel
[J]. 2010 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS RFIC SYMPOSIUM, 2010, : 131 - 134
[6] A variable gain wideband CMOS low-noise amplifier for 75 MHz-3 GHz wireless receivers
Vassou, Chrysoula
Plessas, Fotis
Terzopoulos, Nikolaos
[J]. 2013 IEEE 20TH INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS, AND SYSTEMS (ICECS), 2013, : 839 - 842
[7] A 1.8 GHz CMOS low-noise amplifier
Debono, CJ
Maloberti, F
Micallef, J
[J]. ICECS 2001: 8TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS AND SYSTEMS, VOLS I-III, CONFERENCE PROCEEDINGS, 2001, : 1111 - 1114
[8] A 26 GHz low-noise amplifier in 0.18μm CMOS technology
Yu, KW
Lu, YL
Huang, DQ
Chang, DC
Liang, V
Chang, MF
[J]. EDMO2003: 11TH IEEE INTERNATIONAL SYMPOSIUM ON ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS, 2003, : 93 - 98
[9] 24 GHz low-noise amplifier in 0.18 μm CMOS technology
Yu, KW
Lu, YL
Huang, D
Chang, DC
Liang, V
Chang, MF
[J]. ELECTRONICS LETTERS, 2003, 39 (22) : 1559 - 1560
[10] Tunable Balun Low-Noise Amplifier in 65 nm CMOS Technology
Sturm, Johannes
Groinig, Marcus
Xiang, Xinbo
[J]. RADIOENGINEERING, 2014, 23 (01) : 319 - 327

← 1 2 3 4 5 →