On the generation of twinning dislocations in hcp twin boundaries

被引：8
|
作者：
Serra, A [1 ]
Bacon, DJ [1 ]
机构：
[1] UNIV LIVERPOOL,DEPT MAT SCI & ENGN,LIVERPOOL L69 3BX,MERSEYSIDE,ENGLAND
来源：
INTERGRANULAR AND INTERPHASE BOUNDARIES IN MATERIALS, PT 2 | 1996年 / 207-卷
关键词：
twinning; twin-boundary; twin-growth; twinning dislocations; computer simulation;
D O I：
10.4028/www.scientific.net/MSF.207-209.553
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The interaction of matrix dislocations with twin boundaries in hcp metals has been considered as a possible mechanism for twin growth. The crystallographic analysis for the interfacial defects is made in terms of the dichromatic pattern associated with each twin. The structure and behaviour of the interface and related defects are studied by means of atomic computer simulation. As a result, a new source of twinning dislocations is described.
引用
收藏
页码：553 / 556
页数：4
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