Frequency Scaling, Elastic Transition, and Broad-Range Frequency Tuning in WSe2 Nanomechanical Resonators

被引:24
|
作者
Zhu, Jiankai [1 ]
Xu, Bo [1 ]
Xiao, Fei [1 ]
Liang, Yachun [1 ]
Jiao, Chenyin [1 ]
Li, Jing [1 ]
Deng, Qingyang [1 ]
Wu, Song [1 ]
Wen, Ting [1 ]
Pei, Shenghai [1 ]
Xia, Juan [1 ]
Wang, Zenghui [1 ,2 ]
机构
[1] Univ Elect Sci & Technol China, Inst Fundamental & Frontier Sci, Chengdu 610054, Peoples R China
[2] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
基金
中国博士后科学基金; 中国国家自然科学基金;
关键词
2D materials; 2D semiconductor; frequency scaling; frequency tuning; nanomechanics; nanomechanical resonators; PARAMETRIC AMPLIFICATION; MECHANICAL RESONATORS; MOS2; PERFORMANCE; INVERTERS; MODES;
D O I
10.1021/acs.nanolett.2c00494
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Nanomechanical resonators based on atomic layers of tungsten diselenide (WSe2) offer intriguing prospects for enabling novel sensing and signal processing functions. The frequency scaling law of such resonant devices is critical for designing and realizing these high-frequency circuit components. Here, we elucidate the frequency scaling law for WSe2 nanomechanical resonators by studying devices of one-, two-, three-, to more than 100-layer thicknesses and different diameters. We observe resonant responses in both mechanical limits and clear elastic transition in between, revealing intrinsic material properties and devices parameters such as Young???s modulus and pretension. We further demonstrate a broad frequency tuning range (up to 230%) with a high tuning efficiency (up to 23% V???1). Such tuning efficiency is among the highest in resonators based on two-dimensional (2D) layered materials. Our findings can offer important guidelines for designing high-frequency WSe2 resonant devices.
引用
收藏
页码:5107 / 5113
页数:7
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