Prospect of soft switching power converter technologies

被引:0
|
作者
Trivedi, M [1 ]
Shenai, K [1 ]
机构
[1] Univ Illinois, Dept Elect Engn & Comp Sci, Chicago, IL 60607 USA
关键词
D O I
10.1109/MODSYM.1998.741207
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper reports a detailed study of hard and soft-switching performance of high power unipolar and bipolar silicon transistors. Extensive measurements and rigorous two-dimensional (2-D) simulations are used to understand the switching dynamics of power bipolar transistors, power MOSFETs, and insulated gate bipolar transistors (IGBT) in zero-voltage and zero-current switching conditions. It is shown that these devices exhibit distinct switching characteristics during turn-off under various switching conditions.
引用
收藏
页码:119 / 122
页数:4
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