Surface oxide reduction and bilayer molecular assembly of a thiol-terminated organosilane on Cu

被引:32
|
作者
Ganesan, PG [1 ]
Kumar, A
Ramanath, G
机构
[1] Rensselaer Polytech Inst, Dept Mat Sci & Engn, Troy, NY 12180 USA
[2] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.1968414
中图分类号
O59 [应用物理学];
学科分类号
摘要
We demonstrate the use of thiol-terminated organosilane to reduce the surface oxide and form a protective layer on Cu surfaces. The thiol termini of mercapto-propyl-trimethoxy-silane molecules reduce the copper oxide, and release disulfide- and sulfonate-terminated silanes. Unreacted mercaptosilanes and disulfides then assemble on the clean Cu surface forming a monolayer via chemisorption. The outward pointing methoxy groups react with other methoxysilane termini of sulfonated- and unreacted organosilanes, forming a molecular bilayer with Si-O-Si linkages between the two layers. These findings open up new possibilities for surface cleaning and passivating Cu interconnects with molecular nanolayers, and minimize surface-scattering-induced conductivity decrease in nanometer-thick Cu lines, without destructively etching the surface Cu oxide. (c) 2005 American Institute of Physics.
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页数:3
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