InGaP/GaAs heterojunction bipolar transistor grown on Si substrate with SiGe graded buffer layer

被引：5
|
作者：
Lew, K. L. [1 ]
Yoon, S. F. [1 ,3 ]
Tanoto, H. [1 ]
Chen, K. P. [1 ,3 ]
Dohrman, C. L. [2 ]
Isaacson, D. M. [2 ]
Fitzgerald, E. A. [2 ]
机构：
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
[2] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA
[3] Singapore MIT Alliance, Singapore 637460, Singapore
来源：
ELECTRONICS LETTERS | 2008年 / 44卷 / 03期
关键词：
D O I：
10.1049/el:20083328
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
What is believed to be the. first InGaP/GaAs heterojunction bipolar transistor grown on SiGe/Si substrate is reported. The collector-emitter offset voltage and the knee voltage of the device are similar to 150 mV and <1V, respectively. The maximum gain of the device is similar to 25 at collector current of similar to 100 mA. The collector and base ideality factor are similar to 1.01 and similar to 1.4, respectively. These results show the good potential for integrating the InGaP/GaAs heterojunction bipolar transistor on Si substrate using the compositionally graded SiGe buffer layer approach.
引用
收藏
页码：243 / U25
页数：2
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