Dram-like mechanical non-volatile memory

被引：0

作者：

Jang, Wean Wi ^{[1
]}

Lee, Jeong Oen ^{[1
]}

Yoon, Jun-Bo ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Sch EECS, 373-1 Guseong Dong, Taejon 305701, South Korea

来源：

TRANSDUCERS '07 & EUROSENSORS XXI, DIGEST OF TECHNICAL PAPERS, VOLS 1 AND 2 | 2007年

关键词：

DRAM; MEMS; surface micromachining; non-volatile memory (NVM); mechanical NVM;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A DRAM-like mechanical non-volatile memory (NVM) is newly proposed and fabricated using CMOS-compatible poly-Si surface micromachining. The key concept is developed that the proposed memory is non-volatile because the MEMS switch can clearly eliminate the leakage current when the device is off The mechanical NVM shows excellent on-off characteristics (sub-threshold swing similar to 4mV/decade), high switching speed (similar to 300kHz) and non-volatility. This paper demonstrates the feasibility of the mechanical NVM as a new memory for ULSI applications.

引用

页数：2

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