Random telegraph noise in SiGe HBTs: Reliability analysis close to SOA limit

被引：3

作者：

Mukherjee, C. ^{[1
]}

Jacquet, T. ^{[1
]}

Chakravorty, A. ^{[2
]}

Zimmer, T. ^{[1
]}

Boeck, J. ^{[3
]}

Aufinger, K. ^{[3
]}

Maneux, C. ^{[1
]}

机构：

[1] Univ Bordeaux, IMS Lab, UMR CNRS 5218, Cours Liberat, F-33405 Talence, France

[2] Indian Inst Technol, Madras, Tamil Nadu, India

[3] Infineon Technol AG, Neubiberg, Germany

来源：

MICROELECTRONICS RELIABILITY | 2017年 / 73卷

关键词：

Aging; RTS noise; Generation-recombination noise; Hot electron; SiGe HBT; Safe-operating area; Traps; LOW-FREQUENCY NOISE; HETEROJUNCTION BIPOLAR-TRANSISTORS; JUNCTION TRANSISTORS; MIXED-MODE; STRESS; DEGRADATION; SIGNAL;

D O I：

10.1016/j.microrel.2017.05.001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we present extensive random telegraph signal (RTS) noise characterization in SiGe heterojunction bipolar transistors. RTS noise, observed at the base, originates at the emitter periphery while at the collector side distinct RTS noise is observed at high-injection that originates from the traps in the shallow trench regions. Time constants extracted from RTS during aging tests allow understanding of trap dynamics and new defect formation within the device structure. This paper provides the first demonstration of RTS measurements during accelerated aging tests to study and understand generation of defects under bias stress in SiGe HBTs operating at the limit of their safe-operating area. (C) 2017 Elsevier Ltd. All rights reserved.

引用

页码：146 / 152

页数：7

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