Magnesium-doped Zinc Oxide as a High Resistance Transparent Layer for thin film CdS/CdTe solar cells

被引：0

作者：

Bittau, Francesco ^{[1
]}

Artegiani, Elisa ^{[2
]}

Abbas, Ali ^{[1
]}

Menossi, Daniele ^{[2
]}

Romeo, Alessandro ^{[2
]}

Bowers, Jake W. ^{[1
]}

Walls, John M. ^{[1
]}

机构：

[1] Loughborough Univ, Wolfson Sch Mech Elect & Mfg Engn, CREST, Loughborough LE11 3TU, Leics, England

[2] Univ Verona, Lab Appl Phys, Dept Comp Sci, Str Le Grazie 15, I-37134 Verona, Italy

来源：

2017 IEEE 44TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC) | 2017年

基金：

英国工程与自然科学研究理事会;

关键词：

magnesium-doped zinc oxide; high resistance transparent layer; thin film; solar cells; CdTe; CONDUCTION-BAND OFFSET; OPTICAL-PROPERTIES; BUFFER LAYERS; DEPOSITION; ALIGNMENT;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Magnesium-doped Zinc Oxide (MZO) was used as an alternative high resistance transparent layer for CdS/CdTe thin film solar cells. Thin films of MZO were deposited by RF magnetron sputtering and deposited on an Indium Tin Oxide contact (ITO). Thin film CdTe devices including a MZO high resistance transparent layer deposited at above 300 degrees C yielde d a mean efficiency exceeding 10.5 %. This compares with an efficiency of 8.2 % without the MZO layer. The improvement in efficiency was due to a higher open circuit voltage and fill factor. Lowering the deposition temperature of MZO reduced the performance of the devices.

引用

页码：752 / 756

页数：5

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