Epitaxial growth of hexagonal CdS films on hydrogen-terminated Si(111) substrates

Hexagonal US films were epitaxially grown directly on hydrogen-terminated Si(111) substrates with nominally 0degrees (just-orientated) and 3degrees-off-orientated surfaces by the hot-wall epitaxy technique. X-ray diffraction theta-2theta scans and pole figures confirmed the epitaxial relationship between the grown US film and Si substrate to be CdS(0001) parallel to Si(111) and CdS[11 (2) over bar0] parallel toSi[1 (1) over bar0]. Strong excitonic emissions as well as donor-acceptor pair emissions were observed for the US film grown on the 3degreesoff-orientated Si(111) substrate. In the US film on the just-orientated Si(111) substrate, on the other hand, no excitonic emissions could be observed.