A study of stray minority carrier diffusion in CMOS image sensors

被引：2

作者：

Lin, Dong-Long ^{[1
]}

Wang, Ching-Chun ^{[1
]}

Wei, Chia-Ling ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 701, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2008年 / 29卷 / 04期

关键词：

penetration depth; single-chip CMOS image sensors; stray minority carrier diffusion;

D O I：

10.1109/LED.2008.917628

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Noise minimization is an important issue for a single-chip CMOS image sensor. Stray minority carriers diffusing from the circuit region to the sensor array through the substrate are one possible source of noise. To study this effect, an nMOS transistor was deliberately placed close to the sensor array as a source of stray minority carriers. The influence on the image quality was then examined by varying the switching frequency applied to the transistor. The results provide useful information for CMOS imager designs to eliminate the effect of stray minority carrier diffusion.

引用

页码：341 / 343

页数：3

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