Polycrystalline silicon thin-film transistors on quartz fiber

被引：8

作者：

Sugawara, Yuta

Uraoka, Yukiharu

Yano, Hiroshi

Hatayama, Tomoaki

Fuyuki, Takashi

Nakamura, Toshihiro

Toda, Sadayuki

Koaizawa, Hisashi

Mimura, Akio

Suzuki, Kenkichi

机构：

[1] Nara Inst Sci & Technol, Nara 6300192, Japan

[2] Furukawa Elect Corp Ltd, Chiba 2908555, Japan

[3] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058565, Japan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 20期

关键词：

D O I：

10.1063/1.2815925

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate the fabrication of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) on a thin quartz fiber for the first time. The poly-Si used in the active layer of the TFTs was prepared by excimer laser annealing of an amorphous Si thin film deposited on the fiber. Top-gated TFTs were fabricated on the fiber, and a field effect mobility of 10 cm(2)/V s was obtained. The proposed TFTs on a thin quartz fiber, named fiber TFTs, have potential application in microelectronic devices using TFTs fabricated on one-dimensional substrates. (c) 2007 American Institute of Physics.

引用

页数：3

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