Contactless photoconductive terahertz generation

被引：9
|
作者：
Zhang, H. [1 ,2 ]
Wahlstrand, J. K. [1 ]
Choi, S. B. [1 ]
Cundiff, S. T. [1 ,2 ]
机构：
[1] Natl Inst Stand & Technol, JILA, Boulder, CO 80309 USA
[2] Univ Colorado, Dept Elect Comp & Energy Engn, Boulder, CO 80309 USA
来源：
OPTICS LETTERS | 2011年 / 36卷 / 02期
关键词：
RADIATION;
D O I：
10.1364/OL.36.000223
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We describe a pulsed terahertz (THz) emitter that uses a rapidly oscillating, high-voltage bias across electrodes insulated from a photoconductor. Because no carriers are injected from the electrodes, trap-enhanced electric fields do not form. The resulting uniform field allows excitation with a large laser spot, lowering the carrier density for a given pulse energy and increasing the efficiency of THz generation. Compared to a dc bias, less susceptibility to damage is observed. (C) 2011 Optical Society of America
引用
收藏
页码：223 / 225
页数：3
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