Silicon nanowire metal-semiconductor-metal photodetectors

被引：4

作者：

Adachi, Michael M. ^{[1
]}

Wang, Kai ^{[1
]}

Chen, Feng ^{[1
]}

Karim, Karim S. ^{[1
]}

机构：

[1] Univ Waterloo, Dept Elect & Comp Engn, Waterloo, ON N2L 3G1, Canada

来源：

MEDICAL IMAGING 2010: PHYSICS OF MEDICAL IMAGING | 2010年 / 7622卷

关键词：

Silicon nanowire; MSM; photodetector; GROWTH;

D O I：

10.1117/12.845503

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Silicon nanowire photodetectors were fabricated for large area digital imaging applications. An array of silicon nanowires fabricated by plasma enhanced chemical vapor deposition (PECVD) was incorporated into lateral metal-semiconductor-metal (MSM) photodetectors with 2 mu m electrode spacing. A collection efficiency of up to 0.36 and responsivity of 0.136 was measured using an applied bias of -10V. The rise time in response to a blue LED light source was measured to be 35.2 mu s.

引用

页数：8

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