Structural, electrical and optical properties of Ga-doped ZnO films on PET substrate

被引：24
|
作者：
Kim, Byeong-Guk [1 ]
Kim, Jeong-Yeon [1 ]
Lee, Seok-Jin [1 ]
Park, Jae-Hwan [1 ]
Lim, Dong-Gun [1 ]
Park, Mun-Gi [2 ]
机构：
[1] Chungju Natl Univ, Dept Elect Engn, Chungju 380702, Chungbuk, South Korea
[2] LG Display Co Ltd, Proc Dev Team 3, Wollong Myeon 413811, Paju Gyeonggi, South Korea
来源：
APPLIED SURFACE SCIENCE | 2010年 / 257卷 / 03期
关键词：
Transparent conducting oxide; ZnO; O(2) plasma; Polyethylene terephthalate (PET); THIN-FILMS; ROOM-TEMPERATURE; TRANSPARENT; DEPOSITION; PRESSURE;
D O I：
10.1016/j.apsusc.2010.08.014
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The effects of O(2) plasma pretreatment on the properties of Ga-doped ZnO films on PET substrate were studied. Ga-doped ZnO films were fabricated by RF magnetron sputtering process. To improve surface energy and adhesion of PET substrate, O(2) plasma pretreatment process was used prior to GZO sputtering. With increasing O(2) plasma treatment time, the contact angle decreases and the RMS surface roughness increases significantly. The transmittance of GZO films on PET substrate in a wavelength of 550 nm was 70-84%. With appropriate O(2) plasma treatment, the resistivity of GZO films on PET substrate was 3.4x10(-3) Omega cm. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：1063 / 1067
页数：5
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