Multi-megawatt X-band semiconductor microwave switches

被引：0
|
作者：
Tamura, F [1 ]
Tantawi, SG [1 ]
机构：
[1] Stanford Univ, Stanford Linear Accelerator Ctr, Menlo Park, CA 94025 USA
来源：
2000 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 2000年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We describe concepts for high power semiconductor RF switches, designed to handle 100MW-order signal at X-band, We describe an abstract design methodology, and derive a general scaling law for these switches. We also present a design and experimental work of a switch operating at TE01 mode in over-moded circular waveguides. The switch is composed of array of tee junction elements that have PIN/NIP diode array window in the third arm.
引用
收藏
页码：1731 / 1734
页数：4
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