Case Study and Fault Modeling for Wrong Redundancy Evaluation on DRAM Devices

被引:0
|
作者
Versen, Martin [1 ]
Diaconescu, Dorina [2 ]
Touzel, Jerome [2 ]
机构
[1] Qimonda AG, Campeon 1-12, D-85579 Neubiberg, Germany
[2] Infineon AG, D-81739 Munich, Germany
来源
ISTFA 2007 | 2007年
关键词
D O I
暂无
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The characterization of failure modes of DRAM is often straight forward if array related hard failures with specific addresses for localization are concerned. The paper presents a case study of a bitline oriented failure mode connected to a redundancy evaluation in the DRAM periphery The failure mode analysis and fault modeling focus both on the root-cause and on the test aspects of the problem.
引用
收藏
页码:252 / +
页数:2
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