Broadband Class-EM Power Amplifier with Double Reactance Compensation Technique

被引:0
|
作者
Mugisho, Moise Safari [1 ]
Thian, Mury [1 ]
Grebennikov, Andrei [2 ]
机构
[1] Queens Univ Belfast, Belfast, Antrim, North Ireland
[2] Sumitomo Elect Europe, Oxford, England
关键词
Broadband; Class-E-M; dc-feed inductance; GaN; high-efficiency; switching power amplifier; reactance compensation; ZCS; ZCDS; ZVS; ZVDS; HIGH-EFFICIENCY;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents the analysis and design of a high-efficiency broadband Class-E-M power amplifier (PA). The inherent broadband characteristic of the Class-E-M PA that turns out due to the resistive-reactive impedance terminations at the fundamental and second harmonic frequency is first investigated and then extended using double reactance compensation technique by incorporating a parallel resonator LPCP into the main circuit's load network. Designed using GaN HEMTs, the PAs deliver 23.7% (without LPCP) and 60.4% (with LPCP) fractional bandwidth, within which the PAE is larger than 60% and the output power is relatively constant.
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页数:5
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