The domain wall structure in disordered ferroelectrics

被引:2
|
作者
Kirichenko, EV [1 ]
Sobolewska, A [1 ]
Stephanovich, VA [1 ]
机构
[1] Univ Opole, Dept Math & Informat, PL-45052 Opole, Poland
关键词
disordered dielectric; impurity concentration; domain wall thickness;
D O I
10.1080/00150190390211693
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We calculate the structure of 180degrees domain wall in disordered ferroelectrics with random site electric dipoles (i.e. those like K1-xLixTaO3, KTa1-xNbxO3). The calculation is performed on the basis of a free energy functional of disordered dielectrics derived by us earlier [2] within the framework of a random local field method. We obtain the domain wall thickness as a function of impurity dipole concentration n and temperature T. It is shown that in disordered ferroelectric the domain wall is usually broader that in their ordered counterparts; the thickness increases infinitely near phase transition temperature and critical concentration of dipoles.
引用
收藏
页码:211 / 219
页数:9
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