High-Power-Density GaN-Based Converters Thermal Management Considerations

Increasing the power density of the latest generation of gallium nitride (GaN) transistor-based power converters, where smaller die sizes and chip-scale packages are deployed, can be achieved by adding a simple thermal solution that yields systems that raise the bar and set the standard for power density. Heat extraction from a small GaN transistor, or integrated circuit, can be as effective as, if not superior to, removing the heat from a bulky Si MOSFET when employing a good thermal design. This article presents a simple-to-implement thermal solution suitable for chip-scale GaN transistors. Furthermore, the assembly criteria and design boundaries are given with a derivation of the thermal models together with experimental validation.