SPICE-compatible floating-dot single-electron memory model with a new description of SOI MOSFETs including quantum-mechanical effects

被引：0

作者：

Yu, YS ^{[1
]}

Kim, SH

Choi, BH

Hong, SH

Hwang, SW

Ahn, D

机构：

[1] Hankyong Natl Univ, Dept Informat & Control Engn, Anseong 456749, South Korea

[2] Korea Univ, Dept Elect & Comp Engn, Seoul 136701, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2004年 / 44卷 / 01期

关键词：

single-electron memory; SPICE; single-electron Box; SOI MOSFET;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We introduce a SPICE-compatible model for a floating-dot single-electron memory (FDSEM), which includes both the single-electron box (SEB) model and the modified SOI MOSFET model. In this model, a surface potential model for SOI devices is developed. The accuracy of the developed model is verified with experimental data from FDSEM devices.

引用

页码：117 / 120

页数：4