Characterization of the Variable Retention Time in Dynamic Random Access Memory

被引：10
|
作者：
Kim, Heesang [1 ,2 ]
Oh, Byoungchan [1 ,2 ]
Son, Younghwan [1 ,2 ]
Kim, Kyungdo [3 ]
Cha, Seon-Yong [3 ]
Jeong, Jae-Goan [3 ]
Hong, Sung-Joo [3 ]
Shin, Hyungcheol [1 ,2 ]
机构：
[1] Seoul Natl Univ, Sch Elect Engn & Comp Sci, Seoul 151742, South Korea
[2] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151742, South Korea
[3] Hynix Semicond Inc, Div Res & Dev, Inchon 467701, South Korea
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2011年 / 58卷 / 09期
关键词：
Dynamic random access memory (DRAM); gate-induced drain leakage (GIDL); leakage current; location of trap; random telegraph noise (RTN); variable retention time (VRT); NOISE; DRAM;
D O I：
10.1109/TED.2011.2160066
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
To study the relationship between the original leakage current fluctuation and the detected variable retention time (VRT) from the retention test of dynamic random access memory (DRAM), we simulated the real procedure of the VRT measurement of DRAM. By investigating the results of the simulation, we proposed a new effective VRT measurement method based on the comparison between measurement and simulation. In addition, we investigated the characteristics of the VRT phenomenon in DRAM using the VRT characterization method developed in this study.
引用
收藏
页码：2952 / 2958
页数：7
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