Organic contaminant detection of silicon wafers using negative secondary ions induced by cluster ion impacts

被引：4

作者：

Hirata, Kouichi ^{[1
]}

Saitoh, Yuichi ^{[2
]}

Chiba, Atsuya ^{[2
]}

Narumi, Kazumasa ^{[3
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Natl Metrol Inst Japan, Tsukuba, Ibaraki 3058565, Japan

[2] Japan Atom Energy Agcy, Takasaki Adv Radiat Res Inst, Dept Adv Radiat Technol, Takasaki, Gunma 3701292, Japan

[3] Japan Atom Energy Agcy, Adv Sci Res Ctr, Takasaki, Gunma 3701292, Japan

来源：

APPLIED PHYSICS EXPRESS | 2008年 / 1卷 / 04期

关键词：

D O I：

10.1143/APEX.1.047002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Emission yields of carbon and hydrogenated carbon cluster secondary ions CpHq+/- (P >= 1, q >= 0) originating from organic contaminants on a silicon wafer are compared between monoatomic (0.5-MeV/atom C-1(+)) and cluster ion (0.5-MeV/atom C-8(+)) impacts using time-of-flight (TOF) secondary ion mass spectrometry. CpHq- for the cluster ion impact exhibits the highest emission yield per incident atom among CpHq+/- with the same p number. The highest relative CpHq- emission yield for the cluster ion impact reaches similar to 20 and similar to 60 times higher in comparison with those of CpHq- and CpHq+ with the same p number for the impact of the monoatomic ion with the same velocity, respectively. Combination of negative secondary ion TOF measurements with cluster impact ionization is a promising tool for highly sensitive detection of organic-contaminants on silicon wafers. (C) 2008 The Japan Society of Applied Physics.

引用

页码：0470021 / 0470023

页数：3

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