Low-threshold 833-nm GaAsP-AlGaAs tensile-strained quantum-well laser diodes

We report the demonstration of TM polarized laser emission at 833 nm from GaAsP-AlGaAs quantum well laser structures grown on GaAs substrates by low-pressure organometallic vapor phase epitaxy for the first time. This is the logest wavelength near infrared TM polarized laser ever reported. Broad area laser diodes containing single GaAs0.95 P-0.05 A/cm(2) for a cavity length of 1 mm and with a high differential quantum efficiency of 32%/facet for cavity length less than 500 mu m.