GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study

被引：2
|
作者：
Wheeldon, Jeffrey F. [1 ]
Valdivia, Christopher E. [1 ]
Walker, Alex [1 ]
Kolhatkar, Gitanjali [1 ]
Masson, Denis [2 ]
Riel, Bruno [2 ]
Fafard, Simon [2 ]
Jaouad, Abdelatif [3 ]
Turala, Artur [3 ]
Ares, Richard [3 ]
Aimez, Vincent [3 ]
Hall, Trevor J. [1 ]
Hinzer, Karin [1 ]
机构：
[1] Univ Ottawa, Ctr Res Photon, Ottawa, ON, Canada
[2] Cyrium Technol Inc, Ottawa, ON, Canada
[3] Univ Sherbrooke, Ctr Recherche Nanofabricat Nanocaracterisat CRN2, Sherbrooke, PQ, Canada
来源：
6TH INTERNATIONAL CONFERENCE ON CONCENTRATING PHOTOVOLTAIC SYSTEMS (CPV-6) | 2010年 / 1277卷
基金：
加拿大自然科学与工程研究理事会;
关键词：
Concentrated photovoltaics; tunnel junctions; AlGaAs; multi-junction solar cell; III-V semiconductors; concentrator systems; solar energy;
D O I：
10.1063/1.3509213
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of < 10(-4) Omega.cm(2) and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm(2)). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances > 5x10(-4) Omega.cm(2).
引用
收藏
页码：28 / +
页数：2
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