Porous silicon-copper phthalocyanine heterostructure based photoelectrochemical cell

被引:6
|
作者
Betty, C. A. [1 ]
Padma, N. [2 ]
Arora, Shalav [1 ]
Survaiya, Parth [1 ]
Bhattacharya, Debarati [3 ]
Choudhury, Sipra [1 ]
Roy, Mainak [1 ]
机构
[1] BARC, Chem Div, Bombay 85, Maharashtra, India
[2] BARC, Tech Phys Div, Bombay 85, Maharashtra, India
[3] BARC, Solid State Phys Div, Bombay 85, Maharashtra, India
关键词
Photoelectrochemical cell; Copper phthalocyanine; Porous silicon; Semiconductor heterostructure; SOLAR-CELLS; FABRICATION; GROWTH; FILMS;
D O I
10.1016/j.apsusc.2017.09.174
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A hybrid solar cell consisting of nanostructured p-type porous silicon (PS) deposited with visible light absorbing dye, Copper Phthalocyanine (CuPc) has been prepared in the photoelectrochemical cell configuration. P-type PS with (100) and (111) orientations which have different porous structures were used for studying the effects of the substrate morphology on the cell efficiency. Heterostructures were prepared by depositing three different thicknesses of CuPc for optimizing the cell efficiency. Structural and surface characterizations were studied using XRD, Raman, SEM and AFM on the PS-CuPc heterostructure. XRD spectrum on both plane silicon and porous silicon indicates the pi-pi stacking of CuPc with increased disorder for CuPc film on porous silicon. Electrochemical characterizations under sun light type radiation have been carried out to evaluate the photosensitivity of the heterostructure. Between the two different substrates, (100) PS gives better photocurrent, possibly due to the higher surface area and lower series resistance of the structure. Among the (100) PS substrates, (100) PS with 15 nm CuPc film gives V-oc more than 1 V resulting in higher efficiency for the cell. The study suggests the scope for optimization of solar cell efficiency using various combinations of the substrate structure and thickness of the sensitizing layer. (c) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码:463 / 468
页数:6
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