Electrodeposited Cu-In-Ga-Se Thin Films for CIGS-Based Solar Cells

被引：0

作者：

Bhattacharya, Raghu N. ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, 1617 Cole Blvd, Golden, CO 80401 USA

来源：

THIN-FILM COMPOUND SEMICONDUCTOR VOLTAICS-2009 | 2010年 / 1165卷

关键词：

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Cyclic voltammogram studies were performed on H2SeO3, CuSO4 In-2(SO4)(3), GaCl3, H2SeO3 + CuSO4+ In-2(SO4)(3) and H2SeO3 + CuSO4 + In-2(SO4)(3) + GaCl3 to understand the electrodeposition mechanism. The reduction potential from the cyclic voltammogram studies indicates that the first deposited layer is Cu from the Cu-In-Se and Cu-In-Ga-Se solution mixture. The subsequent deposition of the In and Ga layer is more favorable on the first-deposited Cu layer.

引用

页码：37 / +

页数：2

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