A permutation-based page interleaving scheme to reduce row-buffer conflicts and exploit data locality

被引:86
|
作者
Zhang, Z [1 ]
Zhu, ZC [1 ]
Zhang, XD [1 ]
机构
[1] Coll William & Mary, Dept Comp Sci, Williamsburg, VA 23187 USA
关键词
D O I
10.1109/MICRO.2000.898056
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
DRAM row-buffer conflicts occur when a sequence of requests on different rows goes to the same memory bank, causing much higher memory access latency than requests to the same row or to different banks. In this paper, we analyze the sources of row-buffer conflicts in the context of superscalar processors, and propose a permutation-based page interleaving scheme to reduce row-buffer conflicts and to exploit data access locality in the row-buffer. Compared with several existing schemes, we show that the permutation-based scheme dramatically increases the hit rates on DRAM row-buffers and reduces memory stall time of the SPEC95 and TPC-C workloads. The memory stall times of the workloads are reduced up to 68% and 50%, compared with the conventional cache line and page interleaving schemes, respectively.
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页码:32 / 41
页数:10
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