Effect of energy band bending on non-steady-state Dember EMF in bipolar semiconductors

被引：3

作者：

Konin, A. ^{[1
]}

机构：

[1] Lithuania Acad Sci, Inst Semicond Phys, LT-01108 Vilnius, Lithuania

来源：

SEMICONDUCTORS | 2007年 / 41卷 / 10期

关键词：

73.20.At; 73.40.Cg; 73.50.Gr; 73.50.Pz;

D O I：

10.1134/S1063782607100119

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A theory of the non-steady-state Dember emf in bipolar semiconductors with regard to the boundary conditions at a real metal-semiconductor junction and energy-band bending near the sample surface is developed. It is shown that the surface potential can substantially change both the amplitude of the Dember emf and its phase-frequency characteristic.

引用

页码：1185 / 1188

页数：4

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