Fabrication and photoluminescence of Er-doped Al2O3 thin films deposited by sol-gel method

被引：0
|
作者：
Fan, Chao [1 ]
Wang, Jinliang [1 ]
Tang, Ning [1 ]
Xu, Hengxing [1 ]
Wei, Guoke [1 ]
机构：
[1] Beihang Univ, Dept Phys, Beijing, Peoples R China
来源：
INEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2 | 2010年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Erbium doped Al2O3 thin films were fabricated on quartz substrate by sol-gel method. Aluminum nitrate was used as inorganic precursor, whereas erbium was introduced as erbium nitrate. And then the layers were deposited by a spin-coating procedure. The as-deposited films, in which the erbium content was between 5 and 15 w. %, was annealed in air between 600 and 1200 degrees C. The structure, morphology and Er-dopant concentration were investigated by X-ray diffraction(XRD), scanning electron microscopy(SEM) and Rutherford back scattering(RBS), The photoluminescence(PL) of Er doped thin films in near infrared region was also investigated.
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页码：1286 / 1286
页数：1
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