The influence of transverse sizes upon characteristics of single-electron transistor

被引：0

作者：

Abramov, II ^{[1
]}

Ignatenko, SA ^{[1
]}

Pavlenok, SN ^{[1
]}

机构：

[1] Belarussian State Univ Informat & Radioelect, Minsk 220013, BELARUS

来源：

14TH INTERNATIONAL CRIMEAN CONFERENCE: MICROWAVE & TELECOMMUNICATION TECHNOLOGY, CONFERENCE PROCEEDINGS | 2004年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The modified physical model of metal single-electron transistor (SET) was proposed. On the basis of the model transverse sizes influence of structure on I-V characteristics was investigated.

引用

页码：518 / 519

页数：2

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