Mechanism of electron conduction in self-assembled alkanethiol monolayer devices

被引:42
|
作者
Lee, TH
Wang, WY
Reed, MA
机构
[1] Yale Univ, Dept Phys, New Haven, CT 06520 USA
[2] Yale Univ, Dept Elect Engn, New Haven, CT 06520 USA
[3] Yale Univ, Dept Appl Phys, New Haven, CT 06520 USA
来源
MOLECULAR ELECTRONICS III | 2003年 / 1006卷
关键词
self-assembled monolayer; alkanethiol; tunneling;
D O I
10.1196/annals.1292.001
中图分类号
X [环境科学、安全科学];
学科分类号
08 ; 0830 ;
摘要
Electron tunneling through self-assembled monolayers (SAMs) of alkanethiols was investigated using nanometer scale devices that allow temperature-dependent current-voltage, I(V,7), measurements. The I(V,7) measurement results show, for the first time, temperature-independent electron transport characteristics, proving direct tunneling as the transport mechanism in alkanethiol SAMs. The measured tunneling currents can be fitted with theoretical calculations using the modified rectangular barrier model of direct tunneling with a barrier height Phi(B) = 1.42 +/- 0.04 eV and a non-ideal barrier factor alpha = 0.65 +/- 0.01 (that may correspond to effective mass of 0.42 in). From the length-dependent conduction measurement on different alkanethiols of various lengths, the tunneling current exhibits exponential dependence on the molecular length, d, as I proportional to exp(-betad), where beta is a decay coefficient that was found to be bias-dependent and agrees with the existing theory of direct tunneling. A zero field decay coefficient beta(0) of 0.79 +/- 0.01 Angstrom(-1) was obtained.
引用
收藏
页码:21 / 35
页数:15
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