Effects of mid-gap defects and barrier interface reactions on tunneling behaviors of ZnO-i-Si heterojunctions

被引：2

作者：

Chang, Chun-Fu ^{[1
]}

Wadekar, Paritosh V. ^{[1
]}

Hsieh, Wan-Chen ^{[1
]}

Lin, Wen-Yen ^{[1
]}

Wang, Yu-Sheng ^{[1
]}

Wang, Jun-Hau ^{[1
]}

Lin, Jyun-Jie ^{[1
]}

Huang, Hui-Chun ^{[2
]}

Chang, Ching-Wen ^{[1
]}

Tu, Li-Wei ^{[1
,3
]}

Liao, Chih-Hsiung ^{[4
]}

Liao, Hua-Hsien ^{[5
]}

Ho, New-Jin ^{[2
]}

Seo, Hye-Won ^{[6
]}

Chen, Quark Y. ^{[1
,7
,8
]}

Chu, Wei-Kan ^{[7
,8
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 80424, Taiwan

[2] Natl Sun Yat Sen Univ, Dept Mat Sci & Optoelect, Kaohsiung 80424, Taiwan

[3] Kaohsiung Med Univ, Dept Med Lab Sci & Biotechnol, Kaohsiung 80708, Taiwan

[4] ROC Mil Acad, Dept Phys, Kaohsiung 830, Taiwan

[5] Enli Technol Co Ltd, Kaohsiung 821, Taiwan

[6] Jeju Natl Univ, Dept Phys, Jeju Si 690756, South Korea

[7] Univ Houston, Texas Ctr Superconduct, Houston, TX USA

[8] Univ Houston, Dept Phys, Houston, TX 77204 USA

来源：

AIP ADVANCES | 2016年 / 6卷 / 07期

关键词：

GAMMA-AL2O3 BUFFER LAYER; FILMS; AL2O3; DEPOSITION; SI(111); DIODES; GROWTH; TEMPERATURE; SUBSTRATE; EPITAXY;

D O I：

10.1063/1.4960012

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Low-leakage pin diodes based on ZnO-i-Si are realized by redox reaction of aluminum with the native oxide SiOx into AlOx and by proper selection of annealing conditions. The main sources of electric leakage was found to arise from charge carrier tunneling via mid-gap states in the semiconductors or lowered tunneling barriers. Less mid-gap states in n-ZnO and high tunneling barrier of the i-layer are key to lowering the leakage. Proper post-annealing of pin diodes effectively heal the mid-gap defects, while maintaining the integrity of the tunneling layers, thus lowering the leakage currents to reach a rectification ratio of 2400, surpassing most similarly benchmarked devices reported in literature. Excessive annealing causes some part of the i-layer to transform into to ZnAl2O4 and Al:ZnO. High Al-doping and lowered potential barrier provided by ZnAl2O4 are responsible for high leakage currents in devices so fabricated. (C) 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).

引用

页数：8