Gallium Nitride Schottky and MIS Power Switch Performance Comparison for 35 GHz Applications

被引：0
|
作者：
Pantellini, Alessio [1 ]
Nanni, Antonio [1 ]
Bettidi, Andrea [1 ]
Carosi, Diego [1 ]
Dominijanni, Donatella [2 ]
Lanzieri, Claudio [1 ]
机构：
[1] Selex ES, I-00131 Rome, Italy
[2] ALTRAN Italia Spa, I-00131 Rome, Italy
来源：
2015 INTEGRATED NONLINEAR MICROWAVE AND MILLIMETRE-WAVE CIRCUITS WORKSHOP (INMMIC) | 2015年
关键词：
Gallium nitride; GaN-HEMT; Ka-band; Power semiconductor switches; SPDT; Switching loss;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
AlGaN/GaN high electron mobility transistors (HEMTs) have attracted considerable attention on high power high frequency switch applications. With the aim to optimize the switching performances, in this paper the comparison between traditional Schottky and alternative MIS solution for Single-Pole Double-Throw (SPDT) switching circuit working in the Ka band will be presented, enhancing the benefits of Metal-Insulator-Semiconductor (MIS) technology in terms of DC characteristics and consequently RF Insertion Loss and Isolation, as well as the related FOMs and the full compliance with monolithic HPAs and LNAs integration. Robustness related to maximum power handling will be also presented.
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页数：3
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