Power performance of thermally-shunted heterojunction bipolar transistors

被引：0
|
作者：
Jenkins, T
Bozada, C
Cerny, C
DeSalvo, G
Dettmer, R
Ebel, J
Gillespie, J
Havasy, C
Kehias, L
Nakano, K
Pettiford, C
Quach, T
Sewell, J
Via, D
Anholt, R
机构：
来源：
1997 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS I-III: HIGH FREQUENCIES IN HIGH PLACES | 1997年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effects of layout and thermal shunt configuration on output power, efficiency, and gain of thermally-shunted AlGaAs/GaAs HBT's were investigated. A maximum power density of 16 mW/mu m(2) at 10 GHz (CW) was observed. The power gain and power-added efficiency (PAE) at this power density were 7.8 dB and 65%, respectively.
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页码：949 / 952
页数：4
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