GaAs-based near-infrared up-conversion device fabricated by wafer fusion

被引：0
|
作者：
Yang, Y. [1 ,2 ]
Liu, H. C. [1 ,2 ]
Shen, W. Z. [1 ]
Gupta, J. A. [2 ]
Luo, H. [2 ]
Buchanan, M. [2 ]
Wasilewski, Z. R. [2 ]
机构：
[1] Shanghai Jiao Tong Univ, Key Lab Artificial Struct & Quantum Control, Dept Phys, Shanghai 200240, Peoples R China
[2] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
来源：
ELECTRONICS LETTERS | 2011年 / 47卷 / 06期
关键词：
D O I：
10.1049/el.2010.3543
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Reported for the first time is a full GaAs-based room-temperature near-infrared (NIR) up-conversion device fabricated by wafer-fusing a GaNAsSb/GaAs pin photodetector (PD) with a GaAs/AlGaAs light-emitting diode (LED). NIR photons with wavelengths in the range 1.3-1.6 mu m were up-converted to 0.87 mu m.
引用
收藏
页码：393 / 394
页数：2
相关论文
共 50 条
  • [1] Pixelless 1.5-μm up-conversion imaging device fabricated by wafer fusion
    Ban, D
    Luo, H
    Liu, HC
    Wasilewski, ZR
    Buchanan, M
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2005, 17 (07) : 1477 - 1479
  • [2] Near-infrared (NIR) up-conversion optogenetics
    Hososhima, Shoko
    Yuasa, Hideya
    Ishizuka, Toru
    Hoque, Mohammad Razuanul
    Yamashita, Takayuki
    Yamanaka, Akihiro
    Sugano, Eriko
    Tomita, Hiroshi
    Yawo, Hiromu
    [J]. SCIENTIFIC REPORTS, 2015, 5
  • [3] Near-infrared (NIR) up-conversion optogenetics
    Shoko Hososhima
    Hideya Yuasa
    Toru Ishizuka
    Mohammad Razuanul Hoque
    Takayuki Yamashita
    Akihiro Yamanaka
    Eriko Sugano
    Hiroshi Tomita
    Hiromu Yawo
    [J]. Scientific Reports, 5
  • [4] GaAs-based near-infrared omnidirectional reflector
    Park, Y
    Roh, YG
    Cho, CO
    Jeon, H
    Sung, MG
    Woo, JC
    [J]. APPLIED PHYSICS LETTERS, 2003, 82 (17) : 2770 - 2772
  • [5] Near-infrared (NIR) optogenetics using up-conversion system
    Hososhima, Shoko
    Yuasa, Hideya
    Ishizuka, Toru
    Yawo, Hiromu
    [J]. Optical Techniques in Neurosurgery, Neurophotonics, and Optogenetics II, 2015, 9305
  • [6] Efficient near-infrared up-conversion photoluminescence in carbon nanotubes
    Akizuki, Naoto
    Aota, Shun
    Mouri, Shinichiro
    Matsuda, Kazunari
    Miyauchi, Yuhei
    [J]. NATURE COMMUNICATIONS, 2015, 6
  • [7] Efficient near-infrared up-conversion photoluminescence in carbon nanotubes
    Naoto Akizuki
    Shun Aota
    Shinichiro Mouri
    Kazunari Matsuda
    Yuhei Miyauchi
    [J]. Nature Communications, 6
  • [8] Cryogenic characteristics of GaAs-based near-infrared light emitting diodes
    Bai, Peng
    Zhan, Yueheng
    Wang, Tianmeng
    Shi, Zhiwen
    Bai, Xueqi
    Zhou, Chaoying
    Xie, Yaning
    Du, Lujie
    Pu, Mengting
    Fu, Zhanglong
    Cao, Juncheng
    Guo, Xuguang
    Shen, Wenzhong
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2020, 35 (03)
  • [9] Narrowband spectrally selective near-infrared photodetector based on up-conversion nanoparticles used in a 2D hybrid device
    Zhou, Nan
    Xu, Bing
    Gan, Lin
    Zhang, Junpei
    Han, Junbo
    Zhai, Tianyou
    [J]. JOURNAL OF MATERIALS CHEMISTRY C, 2017, 5 (07) : 1591 - 1595
  • [10] Light up-conversion from near-infrared to blue using a photoresponsive organic light-emitting device
    Chikamatsu, M
    Ichino, Y
    Takada, N
    Yoshida, M
    Kamata, T
    Yase, K
    [J]. APPLIED PHYSICS LETTERS, 2002, 81 (04) : 769 - 771
12345