A measurement of Lorentz angle of radiation-hard pixel sensors

被引：4

作者：

Aleppo, M ^{[1
]}

机构：

[1] Univ Milan, Dipartimento Fis, Ist Nazl Fis Nucl, Sez Milano, I-20133 Milan, Italy

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2001年 / 465卷 / 01期

关键词：

D O I：

10.1016/S0168-9002(01)00364-3

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Silicon pixel detectors developed to meet LHC requirements were tested in a beam at CERN in the framework of the ATLAS collaboration. The experimental behaviour of irradiated and non-irradiated sensors in a magnetic field is discussed. The measurement of the Lorentz angle for these sensors at different operating conditions is presented. A simple model of the charge drift in silicon before and after irradiation is presented. The good agreement between the model predictions and the experimental results is shown. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：108 / 111

页数：4

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